phase control thyristor H150TBXX symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1600 v v drm repetitive peak off-stage voltage 125 200-1600 v i rrm repetitive peak reverse current v = v rrm 125 25 ma i drm repetitive peak off-state current v = v rrm 125 25 ma conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 70 0 c 150 a i rms rms on-state current 235 a i tsm surge on-state current 3 ka i 2 t i 2 t sine wave, 10ms without reverse voltage 125 45 ka 2 s v t peak on-state voltage drop on-state current = 470a 125 1.80 v v 0 threshold voltage 125 0.90 v r 0 on-state slope resistance 125 1.80 m triggering parameters i gt gate trigger current v d = 5v 25 150 ma v gt gate trigger voltage 25 2.00 v i l latching current v d = 5v 25 600 ma p g ?peak maximum peak gate power pulse width 100 sec 120 w di/dt repetitive rate of rise of current 150 a/ sec v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 25 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.234 0 c/w r th (c-hk) thermal impedance case to heatsink 0.08 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 14 nm w weight 200 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor H150TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor H150TBXX on state power loss 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 200 220 240 260 it ( av ) p t(av) - w 60 0 120 180 0 dc maximum permissible case temp 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 240 it( av ) a t case ( 0 c) 60 0 120 0 180 0 dc h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor H150TBXX max non repetitive surge current 0 500 1000 1500 2000 2500 3000 3500 0.01 0.1 1 10 time in sec i tsm (a) transient thermal impedance junction to case 0 0.05 0.1 0.15 0.2 0.25 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor H150TBXX on state characteristics 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 00.511.522.53 v t (v) i t(av ) a gate trigger characteristics 0.1 1 10 100 10 100 1000 10000 i g (av) v g(v) 25 0 c h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor H150TBXX ordering information: - h 150 tb xx hirect make thyristor i f(av) = 150a tb ? with a pigtail v rrm = xx * 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
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